Notecarriers Efficiency Difference?

Hi everyone,

I would like to better understand the efficiency difference between Notecarriers that use Schottky diodes versus those that use an ORing IC for power source protection and selection.

For example, the Notecarrier F uses Schottky diodes (FSV1045V) with a forward voltage drop of approximately 0.44V. In contrast, Notecarriers that use an ORing IC can have an equivalent forward voltage drop as low as ~0.12V, which is significantly lower.

From an efficiency perspective, this seems relevant — especially when operating from a LiPo battery with a nominal voltage of 3.7V. In the case of the Notecarrier F, after the Schottky diode drop, the effective voltage would be around 3.26V.

My questions are:

  • How significant is the real-world efficiency difference between these two approaches?

  • Does the higher forward voltage drop of the Schottky diode meaningfully impact battery life?

  • Are there other trade-offs (thermal performance, reliability, cost, transient response) that justify choosing one method over the other?

I’d appreciate any insights or measurements from practical experience.

Thanks in advance.